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| savantic semiconductor product specification silicon pnp power transistors 2SB1454 d escription with to-220f package complement to type 2sd2202 low collector saturation voltage: large current capacity applications high current switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -90 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -6 v i c collector current -5 a i cm collector current-peak -9 a t a =25 2.0 p c collector dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220f) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1454 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-1ma ;r be = < -80 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -90 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-3a ;i b =-0.3a -0.5 v i cbo collector cut-off current v cb =-80v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-4v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 70 280 h fe-2 dc current gain i c =-3a ; v ce =-2v 30 f t transition frequency i c =-1a ; v ce =-5v 20 mhz switching times t on turn-on time 0.2 s t s storage time 0.7 s t f fall time i c =-2.0a ;i b1 =-i b2 =-0.2a v cc =-50v ,r l =25 d 0.2 s h fe-1 classifications q r s 70-140 100-200 140-280 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1454 package outline fig.2 outline dimensions |
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